Interacting quasi-band model for electronic states in alloy semiconductors: Relation to averaget-matrix approximation and band anticrossing model
نویسندگان
چکیده
منابع مشابه
Valence Band Structure of InAs1−xBix and InSb1−xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model
The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E - energy for the holes shows a reverse trend. The model is also...
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2014
ISSN: 1882-0778,1882-0786
DOI: 10.7567/apex.7.071201